The present disclosure provides a method for manufacturing ordered nanowires array of NiO doped with
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The present disclosure provides a semiconductor device and a method for manufacturing the same. The
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The present invention discloses a method for manufacturing a semiconductor device, which comprises:
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This invention provides a phosphide catalyst for syngas conversion and the production method and use
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The invention provides an organosilicon amine electrolyte material containing a polyether chain, whi
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A compound represented by formula (I) and the pharmaceutical acceptable salt thereof are disclosed,;
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The present invention provides a method for preparing graphene, including reacting graphite in an ac
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Provided in the present invention are an aberrantly glycosylated integrin, AG-α3β1, and use thereof
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The present disclosure provides a method for manufacturing a three-dimensional semiconductor memory
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The present invention relates to a method for producing cresol from phenol and methanol via gas phas
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