The present invention relates to a method of introducing strain into a channel and a device manufact
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Semiconductor devices and methods for manufacturing the same are disclosed. In one embodiment, a met
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The present invention provides a method for integrating the dual metal gates and the dual gate diele
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Disclosed are a semiconductor photocatalyst for the photocatalytic reforming of biomass derivatives
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A transistor device comprising epitaxial LDD and Halo regions and a method of manufacturing the same
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A semiconductor device and a method for manufacturing the same, the method comprising: providing a s
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A method for forming titanium nitride by PVD is disclosed, comprising: generating ions of a noble ga
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A MOSFET with a graphene nano-ribbon, and a method for manufacturing the same are provided. The MOSF
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A group III nitride high electron mobility transistor (HEMT) device comprises a source electrode (11
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The invention provides a semiconductor device comprising: a substrate; a gate, which is formed on th
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