The present invention discloses a method for manufacturing a semiconductor device, comprising: formi
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A semiconductor device and a method for manufacturing a local interconnect structure for a semicondu
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The present application discloses a non-volatile memory device, comprising a semiconductor fin on an
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Embodiments of the present invention provide an Internet address information processing method, appa
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A method for producing an externally injected gain switch laser ultrashort pulse, comprising the fol
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A functional electrical stimulation system having a boost module to raise an output voltage of a pri
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Phase sensitive X-ray imaging methods provide substantially increased contrast over conventional abs
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A gate stack structure comprises an isolation dielectric layer formed on and embedded into a gate. A
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A semiconductor structure comprises a substrate, a gate stack, a base area, and a source/drain regio
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A composite material comprises a filled skutterudite matrix of formula (I) IyCo4Sb12 in which (I) re
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