The present disclosure discloses a method for manufacturing an N-type MOSFET, comprising: forming a
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Disclosed are a compound of formula I, stereoisomers, pharmaceutically acceptable salts or hydrates
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The present invention relates to a transistor and the method for forming the same. The transistor of
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A semiconductor device, a formation method thereof, and a package structure are provided. The semico
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Provided is a method for manufacturing a p-type MOSFET, including: forming a part of the MOSFET on a
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The present invention provides a semiconductor structure comprising a substrate; a gate stack on the
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A method for making a high-temperature superconducting film includes loading a SrTiO3 substrate in a
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A platinum/carbon nanotube catalyst applicable to heterogeneous asymmetric hydrogenation, which is f
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The present application discloses a method for manufacturing a semiconductor structure, comprising t
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One embodiment of present invention provides a method for manufacturing a semiconductor structure, w
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