The present invention provides an isolation structure for a semiconductor substrate and a method for
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Provided is a preparation method of a crystalline silicon film. The method includes: 1) forming a ma
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Disclosed is a Ce-based composite oxide catalyst for selective catalytic reducing nitrogen oxides wi
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A floating eagle type wave power generating device includes an eagle-head-shaped wave absorption flo
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The present invention relates to new salts of pyrazolopyrimidinone represented by formula (I), and p
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A defect detection system for an extreme ultraviolet lithography mask comprises an extreme ultraviol
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The present invention relates to a metal silicoaluminophosphate molecular sieve MeAPSO with a RHO fr
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A large-size circulating fluidized bed boiler, comprising: a furnace having a vertical furnace cente
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There is provided a FinFET fabricating method, comprising: a. providing a substrate ; b. forming a f
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The present invention provides a method for manufacturing a semiconductor structure, which comprises
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